Electron beam induced resistance change for isolation of wordline shorts in 3D replacement gate NAND
Electron beam induced resistance change for isolation of wordline shorts in 3D replacement gate NAND
Wednesday, November 15, 2023
Exhibit Hall | West 1 (Phoenix Convention Center)
Summary:
We present a new application of electron beam induced resistance change (EBIRCH) as a means to spatially isolate wordline shorts in 3D replacement gate NAND for high-precision physical failure analysis (PFA).
We present a new application of electron beam induced resistance change (EBIRCH) as a means to spatially isolate wordline shorts in 3D replacement gate NAND for high-precision physical failure analysis (PFA).
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See more of: Technical Program