Combining three-dimensional FIB-SEM imaging and EBIC to characterize power semiconductor junctions
Combining three-dimensional FIB-SEM imaging and EBIC to characterize power semiconductor junctions
Monday, November 13, 2023: 11:30 AM
103 A-B (Phoenix Convention Center)
Summary:
Insulated Gate Bipolar Transistors (IGBT) and silicon carbide (SiC) based MOSFETs have become the predominantly used power semiconductors in particular in automotive applications. For failure analysis of such devices, site-specific access to sub-surface fault sites is required, as is understanding their construction and junction profiles, and how the device turns on. For this purpose, we combined three-dimensional (3D) visualization of structure and dopant distributions by FIB-SEM tomography and electron beam induced current (EBIC) measurements on FIB cross-sections.
Insulated Gate Bipolar Transistors (IGBT) and silicon carbide (SiC) based MOSFETs have become the predominantly used power semiconductors in particular in automotive applications. For failure analysis of such devices, site-specific access to sub-surface fault sites is required, as is understanding their construction and junction profiles, and how the device turns on. For this purpose, we combined three-dimensional (3D) visualization of structure and dopant distributions by FIB-SEM tomography and electron beam induced current (EBIC) measurements on FIB cross-sections.