Power Devices (Si, SiC, GaN) I

Monday, November 13, 2023: 11:10 AM-11:50 AM
103 A-B (Phoenix Convention Center)
Mr. Helmut Angerer, Infineon and Dr. Marc Fouchier, Attolight
11:10 AM
GaN epitaxial defects characterization using cathodoluminescence spectroscopy
Dr. Marc Fouchier, Attolight; Dr. Christian Monachon, Attolight; Dr. Matthew Davies, Attolight
11:30 AM
Combining three-dimensional FIB-SEM imaging and EBIC to characterize power semiconductor junctions
Dr. Heiko Stegmann, Carl Zeiss Microscopy GmbH; Mr. Greg Johnson, ZEISS Microscopy; Andreas Rummel, Kleindiek Nanotechnik
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