GaN epitaxial defects characterization using cathodoluminescence spectroscopy

Monday, November 13, 2023: 11:10 AM
103 A-B (Phoenix Convention Center)
Dr. Marc Fouchier , Attolight, Lausanne, Switzerland
Dr. Christian Monachon , Attolight, Lausanne, Switzerland
Dr. Matthew Davies , Attolight, Lausanne, Switzerland

Summary:

This work reviews the capabilities of cathodoluminescence spectroscopy to monitor several key performance indicators during GaN-based High Electron Mobility Transistors (HEMTs) manufacturing.
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