A correlative study of silicon carbide power devices using atom probe tomography and transmission electron microscopy

Monday, November 13, 2023: 3:20 PM
103 A-B (Phoenix Convention Center)
Dr. Ramya Cuduvally, Ph.D. , Canadian Centre for Electron Microscopy, Hamilton, ON, Canada, McMaster University, Hamilton, ON, Canada
Dr. Stephen Russell, Ph.D. , TechInsights Inc., Ottawa, ON, Canada
Mr. Bavley Guerguis , McMaster University, Hamilton, ON, Canada
Dr. Carmen M. Andrei, Ph.D. , Canadian Centre for Electron Microscopy, Hamilton, ON, Canada
Dr. Travis Casagrande, Ph.D. , Canadian Centre for Electron Microscopy, Hamilton, ON, Canada
Dr. Gabriel A. Arcuri, Ph.D. , Canadian Centre for Electron Microscopy, Hamilton, ON, Canada
Ms. Sabaa Rashid , Canadian Centre for Electron Microscopy, Hamilton, ON, Canada
Dr. Brian Langelier, Ph.D. , Canadian Centre for Electron Microscopy, Hamilton, ON, Canada, McMaster University, Hamilton, ON, Canada
Prof. Nabil. D. Bassim , Canadian Centre for Electron Microscopy, Hamilton, ON, Canada, McMaster University, Hamilton, ON, Canada

Summary:

We present a case study of a silicon carbide trench Junction Field Effect Transistor (JFET), wherein the gate diffusion region of this device is examined by Atom Probe Tomography (APT) and Transmission Electron Microscopy (TEM). Using APT we show that the p-type dopant (Al) in the gate diffusion region is non-uniformly distributed within the SiC and exhibits numerous clusters of the size of a few tens of nanometers. To elucidate the potential origin of such a non-homogeneous 3D distribution of the Al dopant, TEM is subsequently used to reveal the presence of lattice defects in the same region. The challenges for APT dopant quantification, quantitative reproducibility and the potential artefacts caused by focused ion beam sample preparation are systematically evaluated for SiC.
See more of: Power Devices (Si, SiC, GaN) III
See more of: Technical Program