Power Devices (Si, SiC, GaN) III
Monday, November 13, 2023: 3:00 PM-4:00 PM
103 A-B (Phoenix Convention Center)
3:00 PM
In-situ Junction Analysis in SiC (and GaN)
Mr. Greg Johnson, ZEISS Microscopy;
Dr. Heiko Stegmann, Carl Zeiss Microscopy GmbH;
Andreas Rummel, Kleindiek Nanotechnik;
Dr. Frank Hitzel, DoubleFox GmbH;
Dr. Domenico Mello, STMicroelectronics;
Dr. Thomas Rodgers, Carl Zeiss Microscopy;
Dr. Martin Kuball, University of Bristol
3:20 PM
A correlative study of silicon carbide power devices using atom probe tomography and transmission electron microscopy
Dr. Ramya Cuduvally, Ph.D., Canadian Centre for Electron Microscopy, McMaster University;
Dr. Stephen Russell, Ph.D., TechInsights Inc.;
Mr. Bavley Guerguis, McMaster University;
Dr. Carmen M. Andrei, Ph.D., Canadian Centre for Electron Microscopy;
Dr. Travis Casagrande, Ph.D., Canadian Centre for Electron Microscopy;
Dr. Gabriel A. Arcuri, Ph.D., Canadian Centre for Electron Microscopy;
Ms. Sabaa Rashid, Canadian Centre for Electron Microscopy;
Dr. Brian Langelier, Ph.D., Canadian Centre for Electron Microscopy, McMaster University;
Prof. Nabil. D. Bassim, Canadian Centre for Electron Microscopy, McMaster University
3:40 PM
A Different Approach for Failure Fault Isolation in 4H-SiC Power Devices Using Thermal Analysis
Dr. Pietro Paolo Barbarino, STMicroelectronics;
Dr. Elisa Vitanza, STMicroelectronics;
Mr. Giancarlo Calvagno, STMicroelectronics;
Dr. Giuseppe Anastasi, STMicroelectronics;
Mr. Massimiliano Astuto, STMicroelectronics;
Dr. Domenico Mello, STMicroelectronics;
Mr. Filippo Giarrizzo, STMicroelectronics;
Dr. Tommaso Melis, Univ. Grenoble Alpes, CNRS, Grenoble INP*, TIMA, * Institute of Engineering Univ. Grenoble Alpes
