In-situ Junction Analysis in SiC (and GaN)

Monday, November 13, 2023: 3:00 PM
103 A-B (Phoenix Convention Center)
Mr. Greg Johnson , ZEISS Microscopy, Oberkochen, NY
Dr. Heiko Stegmann , Carl Zeiss Microscopy GmbH, Oberkochen, Germany
Andreas Rummel , Kleindiek Nanotechnik, Reutlingen, Germany
Dr. Frank Hitzel , DoubleFox GmbH, Braunschweig, NY, Germany
Dr. Domenico Mello , STMicroelectronics, catania, Italy
Dr. Thomas Rodgers , Carl Zeiss Microscopy, Oberkochen, NY, Germany
Dr. Martin Kuball , University of Bristol, Bristol, Bristol, United Kingdom

Summary:

A field of view was FIB_milled into a 4H:SiC power device. In this window, p/n junctions where evaluated by Passive Voltage Contrast (PVC), Electron Beam Induced Current (EBIC), and Kelvin Force Probe (KFPM). Excellent fidelity to expected results was seen, and each technique brought out new insights. In further work, the gate voltage was varied and the changing of depletion zones upon device turn-on is observed.
See more of: Power Devices (Si, SiC, GaN) III
See more of: Technical Program