A Different Approach for Failure Fault Isolation in 4H-SiC Power Devices Using Thermal Analysis

Monday, November 13, 2023: 3:40 PM
103 A-B (Phoenix Convention Center)
Dr. Pietro Paolo Barbarino , STMicroelectronics, Catania, Italy, STMicroelectronics, catania, Italy, STMicroelectronics, Catania, Italy
Dr. Elisa Vitanza , STMicroelectronics, catania, Italy
Mr. Giancarlo Calvagno , STMicroelectronics, Catania, Italy
Dr. Giuseppe Anastasi , STMicroelectronics, Catania, Italy
Mr. Massimiliano Astuto , STMicroelectronics, catania, Italy
Dr. Domenico Mello , STMicroelectronics, catania, Italy
Mr. Filippo Giarrizzo , STMicroelectronics, Catania, Italy
Dr. Tommaso Melis , Univ. Grenoble Alpes, CNRS, Grenoble INP*, TIMA, * Institute of Engineering Univ. Grenoble Alpes, Grenoble Cedex, France

See more of: Power Devices (Si, SiC, GaN) III
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