Streamlined Advanced Semiconductor FA Through In-Situ CAFM and Plasma FIB Integration
Streamlined Advanced Semiconductor FA Through In-Situ CAFM and Plasma FIB Integration
Monday, November 17, 2025: 11:50 AM
2 (Pasadena Convention Center)
Summary:
This work presents a streamlined and efficient FA methodology for advanced integrated circuits. The in-situ combination of pFIB gas-assisted milling and CAFM current imaging eliminates repeated vacuum cycling and sample transfers, significantly reducing analysis time and preserving pristine surfaces for high-quality imaging. SEM-based navigation further enhances efficiency by enabling rapid and precise probe positioning. Case studies on logic and SRAM structures across multiple layers validate the improved efficiency of sequential pFIB/CAFM analysis. Furthermore, the integrated platform enables Scanning EBIC Microscopy, a novel technique for mapping of subsurface junction behavior, offering new capabilities for nanoscale defect localization and device characterization in complex semiconductor technologies.
This work presents a streamlined and efficient FA methodology for advanced integrated circuits. The in-situ combination of pFIB gas-assisted milling and CAFM current imaging eliminates repeated vacuum cycling and sample transfers, significantly reducing analysis time and preserving pristine surfaces for high-quality imaging. SEM-based navigation further enhances efficiency by enabling rapid and precise probe positioning. Case studies on logic and SRAM structures across multiple layers validate the improved efficiency of sequential pFIB/CAFM analysis. Furthermore, the integrated platform enables Scanning EBIC Microscopy, a novel technique for mapping of subsurface junction behavior, offering new capabilities for nanoscale defect localization and device characterization in complex semiconductor technologies.