Understanding the Latent Impact of Residual Particles in 3D NAND

Tuesday, November 18, 2025: 1:10 PM
2 (Pasadena Convention Center)
Xiaochen Zhu , Sandisk Technologies Inc, Milpitas, CA
Mina Rashetnia , Sandisk Technologies Inc, Milpitas, CA
Elliott Rill , Sandisk Technologies Inc, Milpitas, CA
Lito De La Rama , Sandisk Technologies Inc, Milpitas, CA

Summary:

In this paper, we investigated the electrical impact of memory hole (MH) mis-formation defects in a multi-tier three dimensional (3D) NAND memory technology.
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