Material Analysis of Cu End-Point Detection for Advanced Node pFIB Delayering Process Optimization
Material Analysis of Cu End-Point Detection for Advanced Node pFIB Delayering Process Optimization
Monday, November 17, 2025: 1:40 PM
1 (Pasadena Convention Center)
Summary:
As integrated circuits continue to scale down to ever-smaller dimensions and increased complexity, traditional deprocessing and characterization techniques face significant limitations. The increasing density of modern semiconductor devices, now advancing beyond 3nm technology nodes, presents unprecedented challenges in precise layer-by-layer analysis. Over the past decade, plasma Focused Ion Beam (pFIB) delayering has emerged as a standard industry technique for precise layer-by-layer deprocessing of integrated circuits. While previous studies have focused on electrical and topographical characterization of pFIB delayering, comprehensive material and chemical analysis of the delayering process remains crucial, particularly for Cu interconnect end-point monitoring. This study addresses the chemical and structural characterization of pFIB-delayered surfaces, with specific emphasis on the material properties of Cu lines end-point detection. We employed pFIB delayering techniques combined with Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray Spectroscopy (EDS) to systematically analyze multiple points along the Cu end-point monitor curve, correlating signal features with material composition and structural characteristics. This comprehensive characterization aims to optimize failure analysis protocols and establish parameters for automated end-point detection.
As integrated circuits continue to scale down to ever-smaller dimensions and increased complexity, traditional deprocessing and characterization techniques face significant limitations. The increasing density of modern semiconductor devices, now advancing beyond 3nm technology nodes, presents unprecedented challenges in precise layer-by-layer analysis. Over the past decade, plasma Focused Ion Beam (pFIB) delayering has emerged as a standard industry technique for precise layer-by-layer deprocessing of integrated circuits. While previous studies have focused on electrical and topographical characterization of pFIB delayering, comprehensive material and chemical analysis of the delayering process remains crucial, particularly for Cu interconnect end-point monitoring. This study addresses the chemical and structural characterization of pFIB-delayered surfaces, with specific emphasis on the material properties of Cu lines end-point detection. We employed pFIB delayering techniques combined with Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray Spectroscopy (EDS) to systematically analyze multiple points along the Cu end-point monitor curve, correlating signal features with material composition and structural characteristics. This comprehensive characterization aims to optimize failure analysis protocols and establish parameters for automated end-point detection.