Automated Full Wafer FIB Marking – A Smart Way to Improve Overall FA Efficiency and Reduce Human Errors

Monday, November 17, 2025: 11:50 AM
1 (Pasadena Convention Center)
Mr. Kah Chin Cheong , Samsung Austin Semiconductor, LLC, Austin, TX
Dr. Michael Rodder , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Binh Vi Ngu , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Gregory B Collins , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Christopher Penley , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Rafael Lainez , Samsung Austin Semiconductor, LLC, Austin, TX

Summary:

Focused Ion Beam (FIB) marking on integrated circuit (IC) has been implemented for decades; where the die of interest (DOI) is manually counted, cleaved or plucked from a wafer for FIB marking to facilitate physical failure analysis (pFA) work. This method has become less efficient when involving a large volume of DOIs requiring FIB marking. In addition, this method is human error risk questionable, where mis-counting, mis-labeling and mis-marking are common, typically on high count and small die-size products (wafer). In this paper, we introduce an Automated Full Wafer FIB marking method to replace the conventional way. We also showcase step-by-step guide on the automated workflow and finally discuss the results and compare the automated method to the conventional method.
See more of: FIB Sample Preparation II
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