Automation of Electron Channeling Contrast Imaging: Investigation of dislocations in AlGaN/GaN heterostructures

Wednesday, November 19, 2025: 8:40 AM
2 (Pasadena Convention Center)
Mr. Alexander Roch , Infineon Technologies AG, Neubiberg, Germany
Dr. Christian Hollerith , Infineon Technologies AG, Neubiberg, Germany
Dr. Nicole Killat , Infineon Technologies AG, Neubiberg, Germany
Dr. Frank Siegelin , Infineon Technologies AG, Neubiberg, Germany
Dr. Claire Chisholm , KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH, Villach, Austria
Mr. Alexander Hofer , Infineon Technologies Austria AG, Villach, Austria
Prof. Antoine Guitton , Université de Lorraine, Metz, France
Ms. Karen Geens , IMEC Interuniversity Microelectronics Centre, Leuven, Belgium
Mr. Jawad Hadid , IMEC Interuniversity Microelectronics Centre, Leuven, Belgium
Mr. Anurag Vohra , IMEC Interuniversity Microelectronics Centre, Leuven, Belgium
Prof. Matthias Gramich , University of Applied Sciences, Munich, Germany

Summary:

The technique of electron channeling contrast imaging (ECCI) enables the detection and investigation of dislocations in AlGaN/GaN heterostructures based on scanning electron microscopy. Employing the presented automated workflow delivers the acquisition and analysis of a multitude of high-resolution ECC micrographs. The image analysis with a neural network approach reveals dislocation densities, e.g. across a wafer surface, without additional sample preparation.
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