Power Devices (Si, SiC, GaN)
Wednesday, November 19, 2025: 8:00 AM-9:00 AM
2 (Pasadena Convention Center)
Dr. Chris Kang, Thermo Fisher Scientific and Baohua Niu, Intel Corporation
8:00 AM
Correlative near-field characterizations with KPFM, sMIM and SCM to characterize the geometry of a n-channel failed SiC JFET
Prof. Rosine COQ GERMANICUS, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508;
Dr. Mahima CHAUDHARY, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508;
Mrs. Enora VUILLERMET, University of Technology of Troyes, L2n CNRS UMR 7076;
Dr. Mihai LAZAR, University of Technology of Troyes, L2n CNRS UMR 7076
8:20 AM
Low impact analysis of junctions in power devices
Mr. Greg Johnson, Carl Zeiss Microscopy;
Mr. Andreas Rummel, Kleindiek Nanotechnik GmbH;
Dr. Heiko Stegmann, Carl Zeiss Microscopy GmbH;
Ms. Hyun Hwa Kim, Carl Zeiss Microscopy;
N/A Leslie McCluskey, Ted Pella, Inc.;
Dr. Jake R. Jokisaari, PhD, Ted Pella, Inc.
8:40 AM
Automation of Electron Channeling Contrast Imaging: Investigation of dislocations in AlGaN/GaN heterostructures
Mr. Alexander Roch, Infineon Technologies AG;
Dr. Christian Hollerith, Infineon Technologies AG;
Dr. Nicole Killat, Infineon Technologies AG;
Dr. Frank Siegelin, Infineon Technologies AG;
Dr. Claire Chisholm, KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH;
Mr. Alexander Hofer, Infineon Technologies Austria AG;
Prof. Antoine Guitton, Université de Lorraine;
Ms. Karen Geens, IMEC Interuniversity Microelectronics Centre;
Mr. Jawad Hadid, IMEC Interuniversity Microelectronics Centre;
Mr. Anurag Vohra, IMEC Interuniversity Microelectronics Centre;
Prof. Matthias Gramich, University of Applied Sciences
