Scan-mode assisted LockIn RCI and EBIRCH for localization of low resistive defects
Scan-mode assisted LockIn RCI and EBIRCH for localization of low resistive defects
Tuesday, November 18, 2025: 1:50 PM
3 (Pasadena Convention Center)
Summary:
Applying LockIn amplification to Scanning Electron Microscope (SEM) based electrical failure analysis (EFA) techniques improves results and can give access to new information. For LockIn EFA the beam is usually modulated by an electrostatic beam blanker. Fitting an electrostatic beam blanker to a SEM means down time and costs. Here we present a novel solution of a scan-assisted beam-modulation integrated in an Add-On EFA system including a digital LockIn amplifier. In a case study the general issue of increasing low frequency noise with decreasing resistance of the sample in a two-probe measurement as applied in EBIC, RCI and EBIRCH is illustrated. Functionality, benefits and limits of the scan-mode assisted LockIn EFA are discussed. Two examples of IC testing reveal the power of scan-mode assisted LockIn RCI and EBIRCH on low resistive defects.
Applying LockIn amplification to Scanning Electron Microscope (SEM) based electrical failure analysis (EFA) techniques improves results and can give access to new information. For LockIn EFA the beam is usually modulated by an electrostatic beam blanker. Fitting an electrostatic beam blanker to a SEM means down time and costs. Here we present a novel solution of a scan-assisted beam-modulation integrated in an Add-On EFA system including a digital LockIn amplifier. In a case study the general issue of increasing low frequency noise with decreasing resistance of the sample in a two-probe measurement as applied in EBIC, RCI and EBIRCH is illustrated. Functionality, benefits and limits of the scan-mode assisted LockIn EFA are discussed. Two examples of IC testing reveal the power of scan-mode assisted LockIn RCI and EBIRCH on low resistive defects.