Correlative near-field characterizations with KPFM, sMIM and SCM to characterize the geometry of a n-channel failed SiC JFET
Correlative near-field characterizations with KPFM, sMIM and SCM to characterize the geometry of a n-channel failed SiC JFET
Wednesday, November 19, 2025: 8:00 AM
2 (Pasadena Convention Center)
Summary:
In this study, non-destructive nanoscale characterization techniques are employed to investigate the local properties of designed and fabricated Silicon Carbide (SiC) power devices based on lateral Junction Field-Effect Transistors (JFETs). The studied SiC sample is a failed n-type lateral JFET channels, fabricated with multiple SiC layers in the mesa structure with varying doping levels and then several SiC homojunctions. Different electrical modes based on Atomic Force Microscopy (AFM), including the well-known Kelvin Probe Force Microscopy (KPFM), as well as the advanced Scanning Capacitance Microscopy (SCM) and Scanning Microwave Impedance Microscopy (sMIM) modes, are used. In this correlative study, these three AFM electrical modes allow the mapping of electrical properties, identification of junctions, and local doping geometries crucial key for device operation and performance. The approaches demonstrate high effectiveness in resolving small-scale variations within multilayers, providing clear locations in doping concentrations, types, and work function differences. Mappings from the three modes are compared in terms of sensitivity and signal noise. Impact of the applied VDC during the SCM mode on the characterization of SiC junctions is highlighted.
In this study, non-destructive nanoscale characterization techniques are employed to investigate the local properties of designed and fabricated Silicon Carbide (SiC) power devices based on lateral Junction Field-Effect Transistors (JFETs). The studied SiC sample is a failed n-type lateral JFET channels, fabricated with multiple SiC layers in the mesa structure with varying doping levels and then several SiC homojunctions. Different electrical modes based on Atomic Force Microscopy (AFM), including the well-known Kelvin Probe Force Microscopy (KPFM), as well as the advanced Scanning Capacitance Microscopy (SCM) and Scanning Microwave Impedance Microscopy (sMIM) modes, are used. In this correlative study, these three AFM electrical modes allow the mapping of electrical properties, identification of junctions, and local doping geometries crucial key for device operation and performance. The approaches demonstrate high effectiveness in resolving small-scale variations within multilayers, providing clear locations in doping concentrations, types, and work function differences. Mappings from the three modes are compared in terms of sensitivity and signal noise. Impact of the applied VDC during the SCM mode on the characterization of SiC junctions is highlighted.