Innovative Pattern Modification for Hard Failure Diagnosis Using Dynamic Laser Stimulation
Innovative Pattern Modification for Hard Failure Diagnosis Using Dynamic Laser Stimulation
Tuesday, November 18, 2025: 1:30 PM
2 (Pasadena Convention Center)
Summary:
Dynamic Laser Stimulation (DLS) has been predominantly utilized for debugging soft failures, which are characterized by the presence of a shmoo wall/passing window. However, its application has been limited when addressing hard failures, which lack any passing window and on the other hand, hard failures are notoriously difficult to analyze due to the absence of effective fault isolation methods when Photon Emission Microscopy (PEM) analysis provides no clues. This study proposes a novel methodology to extend the applicability of DLS to hard failures by transforming them into soft failures through a detailed analysis of error cycles within the shmoo plot, thereby enabling the use of DLS for a broader spectrum of failure types. The paper presents a comprehensive analysis of the proposed method, including 2 case studies that demonstrate its efficacy in various scenarios. The results indicate a significant improvement and offer new insights in the ability to diagnose and rectify complex hard failures in advanced semiconductor devices.
Dynamic Laser Stimulation (DLS) has been predominantly utilized for debugging soft failures, which are characterized by the presence of a shmoo wall/passing window. However, its application has been limited when addressing hard failures, which lack any passing window and on the other hand, hard failures are notoriously difficult to analyze due to the absence of effective fault isolation methods when Photon Emission Microscopy (PEM) analysis provides no clues. This study proposes a novel methodology to extend the applicability of DLS to hard failures by transforming them into soft failures through a detailed analysis of error cycles within the shmoo plot, thereby enabling the use of DLS for a broader spectrum of failure types. The paper presents a comprehensive analysis of the proposed method, including 2 case studies that demonstrate its efficacy in various scenarios. The results indicate a significant improvement and offer new insights in the ability to diagnose and rectify complex hard failures in advanced semiconductor devices.