Quantitative 3D-Defect Localization using Lock-In Thermography based on Lateral Phase Characteristics
Quantitative 3D-Defect Localization using Lock-In Thermography based on Lateral Phase Characteristics
Thursday, November 20, 2025: 1:50 PM
2 (Pasadena Convention Center)
Summary:
The paper discusses enhancements in quantitative thermal lock-in analysis through spatial phase evaluation for defect localization in complex microelectronic components. It addresses the challenges that arise from increasing integration density and diversification in material composition in microelectronics. The primary focus is on improving sensitivity and spatial resolution in lock-in thermography by analysing the lateral phase distribution to compensate for thermal spreading effects and quantitative depth estimation. Experimental results demonstrate significant improvements in precision and accuracy in defect localization and depth estimation. The paper highlights the potential for application of the proposed method for failure analysis in heterogeneous 3D-integrated microelectronic devices.
The paper discusses enhancements in quantitative thermal lock-in analysis through spatial phase evaluation for defect localization in complex microelectronic components. It addresses the challenges that arise from increasing integration density and diversification in material composition in microelectronics. The primary focus is on improving sensitivity and spatial resolution in lock-in thermography by analysing the lateral phase distribution to compensate for thermal spreading effects and quantitative depth estimation. Experimental results demonstrate significant improvements in precision and accuracy in defect localization and depth estimation. The paper highlights the potential for application of the proposed method for failure analysis in heterogeneous 3D-integrated microelectronic devices.