First and Preliminary Approach at the Usage of FIB ToF for Borophosphilicate Layer Characterization Directly on Device Failing Structures
First and Preliminary Approach at the Usage of FIB ToF for Borophosphilicate Layer Characterization Directly on Device Failing Structures
Monday, November 17, 2025: 1:40 PM
3 (Pasadena Convention Center)
Summary:
In this paper we present a first approach to failure analysis with a ToF FIB on gradually decreasing geometry technology. In particular, we are interested in the possibility of detecting B and P signals in the borophosphosilicate glass layers present in IMD stacks. The innovation is that we try to do a ToF analysis from the section trying to bring us as much as possible into the operating conditions of SIMS analysis. The result is very promising although there is still a lot of work to be done to find an analytical protocol that minimizes the effects induced by the limitations of the instrument, ensures repeatability, and allows in the future to be able to make quantitative extrapolations.
In this paper we present a first approach to failure analysis with a ToF FIB on gradually decreasing geometry technology. In particular, we are interested in the possibility of detecting B and P signals in the borophosphosilicate glass layers present in IMD stacks. The innovation is that we try to do a ToF analysis from the section trying to bring us as much as possible into the operating conditions of SIMS analysis. The result is very promising although there is still a lot of work to be done to find an analytical protocol that minimizes the effects induced by the limitations of the instrument, ensures repeatability, and allows in the future to be able to make quantitative extrapolations.