Microscopy Analysis and Material Characterization I

Monday, November 17, 2025: 1:40 PM-2:40 PM
Ballroom B (Pasadena Convention Center)
Dr. Cecile S. Bonifacio, Fischione Instruments and Prof. Rosine COQ GERMANICUS, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508
1:40 PM
First and Preliminary Approach at the Usage of FIB ToF for Borophosphilicate Layer Characterization Directly on Device Failing Structures
Dr. Domenico Mello, EM Microelectronic, a Company of the Swatch Group; Dr. Clement Huguenot, EM Microelectronic, a Company of the Swatch Group; Dr. Guillaume Fiannaca, EM Microelectronic, a Company of the Swatch Group; Dr. Heiko Stegmann, Carl Zeiss Microscopy GmbH; Dr. Hubert Schulz, Carl Zeiss Microscopy GmbH; Dr. Giuseppe D'Arrigo, CNR-IMM, CNR (Consiglio Nazionale delle Ricerche)
2:00 PM
Applications of Electron Energy Loss Near-Edge Structure Analysis for Defect Characterization in Advanced Semiconductor Devices
Mr. Eric Yi, NXP Semiconductors; Mr. Jacob Levenson, NXP Semiconductors; Dr. Sam Subramanian, NXP Semiconductors; Mr. Rik Otte, NXP Semiconductor; Mrs. Khiem Ly, NXP Semiconductors
2:20 PM
Invited Presentation: Proton Beam Absorbed Current Imaging for Subsurface Failure Analysis: Toward 10 nm Ion Beam Resolution in 3D
Dr. Jeroen van Kan, The National University of Singapore
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