Advancing Semiconductor Characterization: Utilizing 3D Reconstruction Techniques with AFM Electrical Modes
Advancing Semiconductor Characterization: Utilizing 3D Reconstruction Techniques with AFM Electrical Modes
Monday, November 17, 2025: 11:30 AM
2 (Pasadena Convention Center)
Summary:
AFM traditionally is associated with three dimensional scans via topography which creates a two-dimensional array of heights which can be mapped as a textured mesh image. While the image itself can provide depth information, the data still exists as a planar surface of height indicating pixel values, not as an actual three-dimensional scan with pixel depth. SCM and SSRM on a cross section do not even provide this level of depth as ideally these techniques are performed on a perfectly smooth surface. One of the novel improvements this paper will explore involves a new angle on sample preparation integrating bevel polishing alongside a unique image processing and 3D tomography process. This approach enables the exposure of multiple planar layers within the semiconductor device, allowing for comprehensive characterization across different depths without the need to rework samples repeatedly to cut through a device. The images would start from one end of the beveled surface, and an image will be taken of each device effectively working through the depth of the device itself. Then, to reconstruct a comprehensive 3D dopant profile, advanced 3D stitching software is employed. Meticulously aligned and merged, the images create an accurate representation of the device's internal structure.
AFM traditionally is associated with three dimensional scans via topography which creates a two-dimensional array of heights which can be mapped as a textured mesh image. While the image itself can provide depth information, the data still exists as a planar surface of height indicating pixel values, not as an actual three-dimensional scan with pixel depth. SCM and SSRM on a cross section do not even provide this level of depth as ideally these techniques are performed on a perfectly smooth surface. One of the novel improvements this paper will explore involves a new angle on sample preparation integrating bevel polishing alongside a unique image processing and 3D tomography process. This approach enables the exposure of multiple planar layers within the semiconductor device, allowing for comprehensive characterization across different depths without the need to rework samples repeatedly to cut through a device. The images would start from one end of the beveled surface, and an image will be taken of each device effectively working through the depth of the device itself. Then, to reconstruct a comprehensive 3D dopant profile, advanced 3D stitching software is employed. Meticulously aligned and merged, the images create an accurate representation of the device's internal structure.