Cathode Lens Alignment for Damage-free Automated Device Delayering Process with Low-Energy Electron Beam
Cathode Lens Alignment for Damage-free Automated Device Delayering Process with Low-Energy Electron Beam
Thursday, November 20, 2025: 10:40 AM
2 (Pasadena Convention Center)
Summary:
Electrical Fault Analysis (EFA) is essential for detecting hidden defects in malfunctioning microchips. This process begins by exposing the region of interest as a planar surface at a specified layer or depth, using plasma focused ion beam (PFIB). Subsequently, electrical nanoprobes are positioned on the target transistors to assess their electrical properties. High precision and quality of imaging is critical for the accuracy and dependability of both the delayering endpoint and nanoprobe placement, which is done using scanning electron microscope (SEM) imaging. However, studies show that electron irradiation can change the state of these sensitive devices leading to unreliable characterization curves. This work describes a reliable imaging workflow at landing energies below 100 eV, which is critical for electron beam-sensitive samples like semiconductors, batteries, and cells, regardless of sample orientation or imperfections such as roughness, asymmetry, and inhomogeneity.
Electrical Fault Analysis (EFA) is essential for detecting hidden defects in malfunctioning microchips. This process begins by exposing the region of interest as a planar surface at a specified layer or depth, using plasma focused ion beam (PFIB). Subsequently, electrical nanoprobes are positioned on the target transistors to assess their electrical properties. High precision and quality of imaging is critical for the accuracy and dependability of both the delayering endpoint and nanoprobe placement, which is done using scanning electron microscope (SEM) imaging. However, studies show that electron irradiation can change the state of these sensitive devices leading to unreliable characterization curves. This work describes a reliable imaging workflow at landing energies below 100 eV, which is critical for electron beam-sensitive samples like semiconductors, batteries, and cells, regardless of sample orientation or imperfections such as roughness, asymmetry, and inhomogeneity.