Low impact analysis of junctions in power devices

Wednesday, November 19, 2025: 8:20 AM
2 (Pasadena Convention Center)
Mr. Greg Johnson , Carl Zeiss Microscopy, Poughkeepsie, OH
Mr. Andreas Rummel , Kleindiek Nanotechnik GmbH, Reutlingen, Baden-Württemberg, Germany
Dr. Heiko Stegmann , Carl Zeiss Microscopy GmbH, Oberkochen, Germany
Ms. Hyun Hwa Kim , Carl Zeiss Microscopy, Oberkochen, Oberkochen, Germany
N/A Leslie McCluskey , Ted Pella, Inc., Redding, CA
Dr. Jake R. Jokisaari, PhD , Ted Pella, Inc., Redding, CA

Summary:

Building on prior work with EBIC of power devices, this work optimizes a path to examine depletion zones across the full width of an IGBT device. Mechanical polishing and careful interpretation of the signal versus background secondary electron emission were required.
See more of: Power Devices (Si, SiC, GaN)
See more of: Technical Program