Correlative X-ray Nanotomography and FIB-SEM Microscopy for Hybrid Bond Failure Analysis
Correlative X-ray Nanotomography and FIB-SEM Microscopy for Hybrid Bond Failure Analysis
Monday, November 17, 2025: 10:40 AM
2 (Pasadena Convention Center)
Summary:
3D X-ray microscopy (XRM) has been widely adopted as an effective high-resolution imaging and analysis tool over the past decades, particularly in package-level failure analysis [1-3]. This non-destructive technique generally delivers submicron resolution, enabling 3D visualization and digital cross-sectional views of internal components and materials of a semiconductor package. However, the emergence of novel high-density interconnect technologies challenges the resolution limit of traditional XRM. For example, hybrid bonding technology has been promising because it enables chiplets and heterogeneous integration for advanced package systems. The range of Cu-to-Cu bond sizes is projected to push the boundaries to 400 nm interconnection pitch [4]. Fault isolation and failure analysis for IC packages involving hybrid bonds are expected to face more challenges. In this paper, we introduce a new 3D X-ray nanotomography technique, capable of imaging a sample with 50nm resolution. Based on 3D nanotomographic data, the correlated FIB-SEM workflow follows to image interconnect structures or defects at precise fault regions with nanometer accuracy. Because long scan time limits its practical uses of the nanoscale imaging technique, we utilized a DeepRecon method [5-6] to speed up X-ray data acquisition by a factor of four. With appropriately prepared samples, the developed workflow enables successful and efficient failure analysis from die metals, RDLs, microbumps to hybrid bonds in complex IC packages.
3D X-ray microscopy (XRM) has been widely adopted as an effective high-resolution imaging and analysis tool over the past decades, particularly in package-level failure analysis [1-3]. This non-destructive technique generally delivers submicron resolution, enabling 3D visualization and digital cross-sectional views of internal components and materials of a semiconductor package. However, the emergence of novel high-density interconnect technologies challenges the resolution limit of traditional XRM. For example, hybrid bonding technology has been promising because it enables chiplets and heterogeneous integration for advanced package systems. The range of Cu-to-Cu bond sizes is projected to push the boundaries to 400 nm interconnection pitch [4]. Fault isolation and failure analysis for IC packages involving hybrid bonds are expected to face more challenges. In this paper, we introduce a new 3D X-ray nanotomography technique, capable of imaging a sample with 50nm resolution. Based on 3D nanotomographic data, the correlated FIB-SEM workflow follows to image interconnect structures or defects at precise fault regions with nanometer accuracy. Because long scan time limits its practical uses of the nanoscale imaging technique, we utilized a DeepRecon method [5-6] to speed up X-ray data acquisition by a factor of four. With appropriately prepared samples, the developed workflow enables successful and efficient failure analysis from die metals, RDLs, microbumps to hybrid bonds in complex IC packages.