Mr. Greg Johnson

Carl Zeiss Microscopy
Poughkeepsie, OH
USA 12603

Papers:

Microscopy Analysis and Material Characterization - ECCI imaging of epitaxial GaN with conventional FE-SEM
Power Devices (Si, SiC, GaN) - Investigation of early photon emission (PEM) in GaN-on-Si HEMTs, part I
Low impact analysis of junctions in power devices
Defect localization methods for device characterization and yield management