Die Level Fault Isolation I

Wednesday, October 7, 2026: 8:00 AM-9:40 AM
Ms. Lesly Endrinal, Google LLC and Mr. Dan Bodoh, NXP Semiconductors
8:00 AM
Investigation of LVI application for Nanosheet Devices
Dr. Zhigang Song, IBM; Alberto Cestero, IBM Research; Mr. Michael Iwatake, IBM Research; Yandong Liu, IBM Research; Dr. Jocho Nxumalo, IBM; Dr. Qianheng Du, IBM; Dr. Yu Zhu, IBM
8:20 AM
Root Cause Identification of Low Ohmic Shorts in Analog Circuitry and the Application of Thermo Dynamic Imaging
Mr. Sukho Lee, NXP Semiconductors; Mr. Dan Bodoh, NXP Semiconductors; Mr. Shimpei Tominaga, Hamamatsu Photonics K.K.; Mr. Akihito Uchikado, Hamamatsu Photonics K.K.; Dr. Keith Serrels, Hamamatsu Corporation
8:40 AM
A new paradigm to soft defect localization and speed path analysis through Laser Perturbation Probing
Mr. Winson Lua, Advanced Micro Devices - Singapore Pte Ltd; Dr. Venkat Ravikumar, SIngapore University of Technology and Design, Advanced Micro Devices - Singapore Pte Ltd; Ms. Angeline phoa, Advanced Micro Devices - Singapore Pte Ltd; Mr. Gopinath Ranganathan, Advanced Micro Devices - Singapore Pte Ltd
9:00 AM
X‑Ray Assisted Device Alteration for 3DIC with Gate‑All‑Around Transistors, Backside Power Delivery Networks, and Advanced Packaging
May Ling Oh, Intel Corporation; Xinglu Wang, Intel Corporation; Martin Von Haartman, Intel Corporation
9:20 AM
Thermal Frequency Imaging for localization of Buried Back End of Line defects
Mr. D. Nagalingam, GLOBALFOUNDRIES Singapore; Dr. A.C.T. Quah, GLOBALFOUNDRIES Singapore; Ms. J.Y. Chua, GLOBALFOUNDRIES Singapore; Dr. C.Q. Chen, GLOBALFOUNDRIES Singapore
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