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3 Session 3: Nanoprobing Techniques

Monday, November 12, 2012: 1:25 PM-3:05 PM
102AB (Phoenix Convention Center)
Session Chairs:
Mr. John Sanders and Mr. Christian Hobert
1:25 PM
3.1
A New Technique for Non-Invasive Short Localization in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging
Mr. Michél Simon-Najasek, Fraunhofer Institute for Mechanics of Materials; Jörg Jatzkowski, Fraunhofer Institute for Mechanics of Materials; Christian Große, Fraunhofer Institute for Mechanics of Materials; Mr. Frank Altmann, Fraunhofer Institute for Mechanics of Materials; Mr. Jens Beyersdorfer, Fraunhofer Institute for Mechanics of Materials
1:50 PM
3.2
Precise Localization of 28nm Via Chain Resistive Defect Using EBAC and Nanoprobing
Mr. P. Larre, STMicroelectronics; Ms. H. Tupin, STMicroelectronics; Mr. C. Charles, STMicroelectronics; Mr. R. H. Newton, DCG Systems; Dr. Antoine Reverdy, SECTOR TECHNOLOGIES
2:15 PM
3.3
In FAB 300mm Wafer Level Atomic Force Probe Characterization
Mr. Terence Kane, IBM
2:40 PM
3.4
Nanoelectronic Analog Circuit PFA – The Return of Circuit Level Probing
Mr. David Albert, IBM
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