Device FA - Poster

Wednesday, November 9, 2016: 1:30 PM-3:30 PM
Chairs:  Mr. Phil Kaszuba, 967H, Globalfoundries, Essex Junction, VT
Co-chairs:  Mr. Terence Kane, IBM, Hopewell Junction, NY
Body Effect Measurement in DRAM Cell Transistor using Memory Test system
Mr. Il Woo Jung, Sungkyunkwan University; Mr. Bonggu Sung, Samsung Electronics Company; Mr. Daejung Kim, Samsung Electronics Company; Dr. Ilgweon Kim, Samsung Electronics Company; Dr. Hyoungsub Kim, Samsung Electronics Company; Dr. Gyoyoung Jin, Samsung Electronics Company; Prof. Byoungdeok Choi, Sungkyunkwan University
Failure Induced by a Progressive Defect in Memory Device
Dr. Nam incheol, samsung electronics
Quantitative Analysis of Interference Noise by Capacitive Coupling Effects in DRAM
Mr. Seo Seoungbin, Samsung Electronics Co., Ltd
Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-line and Adjacent Contact node in DRAM
Mr. Jung IL Mok, Samsung Electronics Co., Ltd
Failure analysis induced by Memory cell plate Noise in high density DRAMs
Mr. Mingu jung, Samsung Electronics co Ltd
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