35th International Symposium for Testing and Failure Analysis (November 15-19, 2009): Session 3: Nanoprobing

Tuesday, November 17, 2009: 1:30 PM-3:35 PM

Meeting Room J3 (San Jose McEnery Convention Center)

Session Chairs:

Mr. Taylor Cavanah and Dr. Peter Harris

1:30 PM

Nanoprobe Capacitance-Voltage Spectroscopy (NCVS) Localization of 45nm SOI SRAM Array Bit Line Failure
Mr. Terence Kane, IBM; Michael P Tenney, IBM

1:55 PM

The SRAM Soft Failure Analysis with SNM & TR Characterization by Nanoprobing in Sub 45nm
Ms. Jakyung Hong, Samsung Electronics System LSI; Seongjun Cho, Samsung Electronics System LSI; YongWoon Han, Samsung Electronics System LSI; Hunseong Choi, Samsung Electronics System LSI; Sang-Deok Kwon, Samsung Electronics System LSI; Hongseok Kim, Samsung Electronics System LSI; Taeeun Kim, Samsung Electronics System LSI; Seungjun Son, Samsung Electronics System LSI

2:20 PM

Electrical Characterization of Different Failure Modes in Sub-100 Nm Devices Using Nanoprobing Technique
Mr. Erwin Hendarto, Chartered Semiconductor Manufacturing Pte. Ltd.; Suey Li Toh, Chartered Semiconductor Manufacturing Pte. Ltd.; John Sudijono, Chartered Semiconductor Manufacturing Pte. Ltd.; Pik Kee Tan, Chartered Semiconductor Manufacturing Pte. Ltd.; Hao Tan, Chartered Semiconductor Manufacturing Pte. Ltd.; Yeow Whatt Goh, Chartered Semiconductor Manufacturing Pte. Ltd.; Ling Zhu, Chartered Semiconductor Manufacturing Pte. Ltd.; Qin Deng, Chartered Semiconductor Manufacturing Pte. Ltd.; Hongbo Lin, Chartered Semiconductor Manufacturing Pte. Ltd.; Ran He, Chartered Semiconductor Manufacturing Pte. Ltd.; Hongliang Li, Chartered Semiconductor Manufacturing Pte. Ltd.; Zhihong Mai, Chartered Semiconductor Manufacturing Pte. Ltd.; Jeffrey Lam, Chartered Semiconductor Manufacturing Pte. Ltd.

2:45 PM

A Transistor Level Failure Analysis Via Nano- Probing and Junction Stain TEM to Reveal 65nm Device Lightly Doped Drain Profile Abnormality
Ms. Jie Su, Semiconductor Manufacturing International (Beijing) Corp; Sanan Liang, Semiconductor Manufacturing International (Beijing) Corp; Yoyo Wen, Semiconductor Manufacturing International (Beijing) Corp; May Yang, Semiconductor Manufacturing International (Beijing) Corp; Linfeng Wu, Semiconductor Manufacturing International (Beijing) Corp; Chorng Niou, Semiconductor Manufacturing International (Beijing) Corp; Xianfeng Chen, Semiconductor Manufacturing International (Shanghai) Corp; Gary Zhao, Semiconductor Manufacturing International (Beijing) Corp

3:10 PM

FAMOS Fail Bit Verification /Characterization Via NanoProbe
Dr. Mark A. Dexter, Texas Instruments, Inc.; Dr. Richard E. Stallcup, Zyvex Corporation; Dr. Sarma Gunturi, Texas Instruments, Inc.

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