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20 Session 20: Circuit Edit: Beam Interaction Studies

Thursday, November 15, 2012: 10:15 AM-11:55 AM
102AB (Phoenix Convention Center)
Session Chairs:
Mr. Dane Scott and Mr. Michael DiBattista
10:15 AM
20.1
Characterization of Ion Beam Current Distribution Influences on Nanomachining
Dr. Shida Tan, Intel Corporation; Mr. Richard Livengood, Intel Corporation; Yuval Greenzweig, Intel; Dr. Yariv Drezner, Intel; Roy Hallstein, Intel Corporation; Chris Scheffler, Intel Corporation
10:40 AM
20.2
Focused Ion Beam Circuit Edit On Copper Redistribution Layer
Mr. Lorenzo Motta, STMicroelectronics; Mr. Paolo Veneto, STMicroelectronics; Mr. Mark Antolik, DCG Systems; Mr. Donato Di Donato, Sector Technologies
11:05 AM
20.3
Dielectric and Metal Depositions Using Xe+ Focused Ion Beams
Dr. Chad Rue, FEI Company; Brieanna Carrigan, FEI Company
11:30 AM
20.4
Fabrication and Characterization of Helium and Neon Ion Deposited Platinum Wires for Circuit Edit Applications
Dr. William B. Thompson, Carl Zeiss NTS; Lewis Stern, Carl Zeiss NTS; Huimeng Wu, Carl Zeiss NTS; David Ferranti, Carl Zeiss NTS; Deying Xia, Carl Zeiss NTS; Fouzia Khanom, Carl Zeiss NTS; Prof. Philip Rack, University of Tennessee; Mr. Michael W. Phaneuf, Fibics Incorporated; Dr. Carlos Gonzales, University of Tennessee
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