Scanning Probe Analysis

Tuesday, October 6, 2026: 3:20 PM-5:00 PM
Mr. Philip Kaszuba, FASM, Independent Consultant and Dr. Daminda Dahanayaka, IBM Research
3:20 PM
Integrated PFIB Delayering and In-Situ AFM-Based Electrical Characterization for Rapid, Site-Specific 3D Failure Analysis of Advanced-Node Devices
Dr. Jamie D. Gravell, Thermo Fisher Scientific; Mr. Radek Dao, NenoVision s. r. o.; Dr. Jan Neuman, NenoVision s. r. o.
3:40 PM
Sub-4 nm Device Diagnostics: A New Frontier in Fault Isolation through Atomic Force Microscopy
Dr. Dongyeun Won, Samsung Electronics; Mr. Yechan Kwon, Samsung Electronics; Mr. Donghyeon Seo, Samsung Electronics; Mrs. Yeon A Kim, Samsung Electronics; Ms. Shinkyoung Im, Samsung Electronics; Mr. Hoyeong Jeong, Samsung Electronics; Mr. Sungsik Gim, Samsung Electronics; Mrs. Jeongeun Ahn, Samsung Electronics; Mr. Gwang Wook Lee, Samsung Electronics; Dr. Seokjun Won, Samsung Electronics
4:00 PM
Highly Sensitive Kelvin Probe Force Microscopy for visualizing Spatially Fluctuating Electric Potential
Dr. Md Mahamudul Hasan, Texas State University; Dr. Yoichi Miyahara, Texas State University
4:20 PM
Conductive AFM analyses in SOI
Mr. Greg Johnson, Carl Zeiss Microscopy; Dr. Frank Hitzel, DoubleFox GmbH; Mr. Pascal Limbecker, GlobalFoundries Dresden Module One LLC & Co. KG; Dr. Rong Wu, GlobalFoundries Dresden Module One LLC & Co. KG; Dr. Andreas Bautz, GlobalFoundries Dresden Module One LLC & Co. KG
4:40 PM
Novel Applications of Nanoscale IR Spectroscopy Coupled with AFM for Semiconductor Failure Analysis
Dr. Cassandra Phillips, Bruker Nano; Dr. Qichi Hu, Bruker Nano; Dr. Chunzeng Li, Bruker Nano; Dr. Hartmut Stadler, Bruker Nano Surfaces & Metrology; Dr. Jinhee Kim, Bruker Nano; Dr. Peter De Wolf, Bruker Nano Surfaces & Metrology
See more of: Technical Program
<< Previous Session | Next Session >>