35th International Symposium for Testing and Failure Analysis (November 15-19, 2009): Session 7: Posters

Wednesday, November 18, 2009: 2:30 PM-4:00 PM

Exhibit Hall 3 (San Jose McEnery Convention Center)

Session Chair:

Mr. Kendall Scott Wills

Case Study: Failure Analysis of Functional Shmoo Hole with Laser Voltage Probing
Mr. Suk Ho Lee, Samsung Electronics co. Ltd; Mr. Yun Woo Lee, Samsung Electronics co. Ltd; Mr. Kyu Taek Lee, Samsung Electronics co. Ltd; Chi Young Choi, Samsung Electronics co. Ltd; Mr. Han Woo Shin, Neosem Inc.; Mr. Yin Shyang Ng, DCG Systems; Ted Lundquist, DCG Systems

Writing Better Research Reports
Mr. Thomas B. Davis, Micron Technology

The Mechanism and Application of Surface Effect On e-Beam Voltage Contrast and Dopant Contrast
Mr. Li-Lung Lai, Semiconductor Manufacturing International Corporation; Ms. Huimin Gao, Semiconductor Manufacturing International Corporation; Dr. Hong Xiao, Hermes Microvision, Inc.

A New Failure Analysis Flow of Gate Oxide Integrity Failure in Wafer Fabrication
Dr. Chen Changqing, Chartered Semiconductor Mfg Ltd; Mr. Hua Younan, Chartered Semiconductor Mfg Ltd

Doping Profile Inspected by SEM Dopant Contrast, Wet Stain and SCM
Mr. Po Fu Chou, UMC

The Novel TEM Sample Preparation Approach for Targeted Via with Barrier/Cu Seed Layer Inspection
Dr. Wen Fei Hsieh, UMC; Mr. Shih-Hsiang Tseng, UMC; Mr. Bo Min She, UMC

A Novel Technique of Device Measurement After Cross-Sectional FIB in Failure Analysis
Mr. Chih-Chung Chang, UMC; Mr. Jian-Chang Lin, United Microelectronics Corporation; Mr. Wen Sheng Wu, United Microelectronics Corporation, Ltd.; Mr. Chin-Lin Chang, UMC; Chih Yang Tsai, UMC

Effectiveness of Nanoprober in Detecting Single / Multiple Bit Flash Data Gain & Data Loss Failures
Mr. Rajesh Medikonduri, Texas Instruments Incorporated

Interconnect Immobilization Process for Failure Analysis
Ms. Julie Schuchman, Intel Corporation; Julia K. Willis, Intel Corporation

EFFECTIVENESS of Non Destructive Physical Analysis Method Using X-Ray CT Imaging
Mr. Akira Mizoguchi, Mitsubishi Electric Co.; Koichiro Takeuchi, Mitsubishi Electric Co.

In Situ Polyimide Removal Using Modified Decapsulator
Mr. CHITAKUDIGE RAMACHANDRA, TESSOLVE SERVICES PVT LTD; SWEETY.B. MACHAIAH, TESSOLVE SERVICES PVT LTD; CHANDAN.U. GOWDA, TESSOLVE SERVICES PVT LTD; DORAI JAYPAL, TESSOLVE SERVICES PVT LTD; Dr. Sarat Kumar Dash, ISRO Satellite Centre

Evaluation Trial of MEMS Devices by LSI Process Diagnostics
Mr. Wataru Shimizu, Oki Engineering Co., LTD.

Back-End-of-Line Quadrature-Clocked Voltage-Dependent Capacitance Measurements
Dr. Stas V. Polonsky, IBM; Paul Solomon, IBM; Ernesto Shiling, IBM; Laertis Economikos, IBM; Manjul Bhushan, IBM; Mark Ketchen, IBM

Failure Analysis Investigation Leading to a Yield Enhancement On the Production Units
Mr. Rajesh Medikonduri, Texas Instruments Incorporated

Fail Mechanisms Causing Single Bit Flash Data Gain in Flash Memory
Mr. Rajesh Medikonduri, Texas Instruments Incorporated

Decapsulation Techniques for Cu Wire Bonding Package
Dr. Dongmei Meng, LSI; Joe Rupley, LSI; Chris McMahon, LSI

Instrumental Discrepancy and Relation of Stress Condition
Mr. Yuparwadee Satirakul, Spansion (Thailand) Limited; Tanawat Butngam, Spansion (Thailand) Limited; Surapol Phunyapinuant, Spansion (Thailand) Limited

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